4H-SiC VJFETs with Self-Aligned Contacts - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

4H-SiC VJFETs with Self-Aligned Contacts

Emmanouil Vassakis
  • Fonction : Auteur
  • PersonId : 1047539
Mihai Lazar

Résumé

Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm) and its width (1.5-5μm). The transistors exhibited high current handling capabilities (Direct Current density 330A/cm2). The output current reduces with the increase of the measurements temperature due to the decrease of the electron mobility value. The voltage breakdown exhibits a triode shape, which is typical for a static-induction transistor operation.
Fichier principal
Vignette du fichier
Paper_JFETs_v3_dp.pdf (2.34 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02133681 , version 1 (19-05-2019)

Identifiants

  • HAL Id : hal-02133681 , version 1

Citer

Konstantinos Zekentes, Antonis Stavrinidis, George Konstantinidis, Maria Kayambaki, Konstantinos Vamvoukakis, et al.. 4H-SiC VJFETs with Self-Aligned Contacts. ECSCRM'14, Sep 2014, Grenoble, France. pp.WE-P-75. ⟨hal-02133681⟩
52 Consultations
54 Téléchargements

Partager

Gmail Facebook X LinkedIn More