600 V PiN diodes fabricated using on-axis 4H silicon carbide - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2012

600 V PiN diodes fabricated using on-axis 4H silicon carbide

Résumé

This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.
Fichier principal
Vignette du fichier
version_finale.pdf (302.04 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02126341 , version 1 (11-05-2019)

Identifiants

  • HAL Id : hal-02126341 , version 1

Citer

Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, et al.. 600 V PiN diodes fabricated using on-axis 4H silicon carbide. Materials Science Forum, 2012. ⟨hal-02126341⟩
30 Consultations
41 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More