Effect of low RF bias potential on AlN films obtained by Microwave Plasma Enhanced Chemical Vapor Deposition - Archive ouverte HAL Access content directly
Journal Articles Surface and Coatings Technology Year : 2014
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hal-02095957 , version 1 (10-04-2019)

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Florent Tetard, G. Sánchez, P. Tristant, C. Dublanche-Tixier, F. Tétard, et al.. Effect of low RF bias potential on AlN films obtained by Microwave Plasma Enhanced Chemical Vapor Deposition. Surface and Coatings Technology, 2014, 256, pp.3-8. ⟨10.1016/j.surfcoat.2013.10.067⟩. ⟨hal-02095957⟩
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