dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Année : 2009

dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology

Résumé

The authors studied the degradation of metal-oxide semiconductor field effect transistors with 5 nm oxide thickness under Fowler-Nordheim ͑FN͒ stress. In order to study the generated damage in the oxide, they have analyzed the dc characteristics and low frequency noise. The FN stress induces no significant increase in 1/f noise. At the same time random telegraph signal ͑RTS͒ noise is also observed, and its amplitude associated with the drain current is investigated. The failure of the RTS amplitude model assumes that this noise is related to a conductive path.

Domaines

Electronique
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Dates et versions

hal-02066715 , version 1 (06-04-2020)

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Citer

J. Armand, Frédéric Martinez, P. Benoit, M. Valenza, E. Vincent, et al.. dc and low frequency noise analysis of Fowler–Nordheim stress of n-channel metal-oxide semiconductor field-effect transistors processed in a 65 nm technology. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (3), pp.1129. ⟨10.1116/1.3130166⟩. ⟨hal-02066715⟩
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