Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2011
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hal-02025249 , version 1 (19-02-2019)

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Karine Castellani-Coulie, Gnima Toure, Jean-Michel Portal, Olivier Ginez, Hassen Aziza, et al.. Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell. IEEE Transactions on Nuclear Science, 2011, 58 (3), pp.870-876. ⟨10.1109/tns.2011.2129575⟩. ⟨hal-02025249⟩
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