Communication Dans Un Congrès Année : 2017

Emergence of SiC Thyristors Featuring Amplifying Gate Design

Résumé

This paper will highlight ISL’s research activities aimed at high-power SiC-based thyristor switching devices. With the emergence and implementation of novel gate architectures large-area devices will come within reach in the near future. In this context, we report on SiC thyristors fabricated on wafer substrates, featuring an integrated amplifying gate structure: as a result, primary device functioning was established on wafer; on-state and blocking characteristics have been verified so far up to 0.1 A and -20 V, respectively. Herewith, an innovative technology platform is emerging which allows for the development of SiC devices for operational scenarios such as high temperature, harsh environment, and ultra-high (> 10 kV) voltages.

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hal-02004843 , version 1 (02-02-2019)

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  • HAL Id : hal-02004843 , version 1

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Ralf Hassdorf, Sigo Scharnholz, Dirk Bauersfeld, Bertrand Vergne, Luong Viêt Phung, et al.. Emergence of SiC Thyristors Featuring Amplifying Gate Design. International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington DC, United States. ⟨hal-02004843⟩
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