Transient simulation of halide perovskite-based solar cells with mobile ions and carriers
Résumé
Halide Perovskites are considered as solid semiconductors since the beginning of their solar cell development. However, on their film or devices, direct and indirect observations of mobile ions are currently reported. Mobile ions are included in the present study within the drift-diffusion approximations, in addition to general carriers. Ion migration inside the perovskite layer and the abnormal hysteresis effect in the current-voltage measurements are simulated in comparison with the experiments of classic perovskite solar cells. The work is promising for the advancements of halide-perovskite-based devices, such as solar cells, light emitting diodes, lasers, photodetectors, transistors, or memoirists.
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