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Article Dans Une Revue Nanoscale Research Letters Année : 2016

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

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hal-01918136 , version 1 (09-11-2018)

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Youcef A Bioud, Abderraouf A Boucherif, Ali Belarouci, Etienne A Paradis, Dominique A Drouin, et al.. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs. Nanoscale Research Letters, 2016, 11 (1), ⟨10.1186/s11671-016-1642-z⟩. ⟨hal-01918136⟩
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