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Communication Dans Un Congrès Année : 2018

Defect-free, heteroepitaxy through electrochemical etching of germanium for multijunction solar cells applications

Résumé

A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with post epitaxial process to create a region with a high density of nano-voids. The nano-voids are formed by a selective electrochemical porosification through dislocations followed by thermal annealing which act as a free surface for inhibiting dislocation propagation. The TD density is reduced significantly which will be crucial in cutting manufacturing costs of III-V multi-junction solar cells, if the bulk Ge substrates can be replaced with our engineered substrate.
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Dates et versions

hal-01908833 , version 1 (30-10-2018)

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  • HAL Id : hal-01908833 , version 1

Citer

Youcef A. Bioud, Abderraouf Boucherif, Etienne Paradis, Dominique Drouin, Richard Arès. Defect-free, heteroepitaxy through electrochemical etching of germanium for multijunction solar cells applications. Porous Semiconductors - Science and Technology (PSST) and related Conferences 2018, Mar 2018, La grande Motte, France. ⟨hal-01908833⟩
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