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Communication Dans Un Congrès Année : 2018

Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology

Résumé

This paper presents a new diode selector for embedded Phase Cahnge Memory (PCM) in advanced FD-SOI technology. It has been developed to achieve a very low cost selector device but still very efficient to meet PCM specifications. This new device takes advantages of CMOS in FD-SOI: buried oxide (BOX), shallow trench isolation (STI) and high k metal gates allow very low leakages between cells, thus offering great potential for designing embedded memory arrays of up to several Mbit. The selector can drive 300μA at 2V through the memory cell with 2.5V applied on gates together with a limited leakage current of less than 10pA/cell. The effective cell area of under 0.025μm 2 is very competitive as compared to a MOS selector, offering a size reduction of around 60% for the same drinving current. Therefore, the new diode on FD-SOI devices is a great solution for a PCM selector due to its low cost and high density.
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Dates et versions

hal-01900758 , version 1 (29-07-2020)

Identifiants

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Jean-Jacques Fagot, Philippe Boivin, V. Della Marca, Jeremie Postel-Pellerin, Damien Deleruyelle, et al.. Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology. IEEE International Memory Workshop (IMW 2018), May 2018, Kyoto, Japan. ⟨10.1109/IMW.2018.8388839⟩. ⟨hal-01900758⟩
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