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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2018

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

F. Arnaud

Résumé

Extensive electrical characterization of ring oscillators (ROs) made in high-k metal gate 28nm Fully-Depleted Silicon-on-Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage (t P), static current (I STAT), and dynamic current (I DYN) are analyzed for the case of the increase of threshold voltage (V TH) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product (EDP) can be significantly reduced at low temperature by applying a forward body bias voltage (V FBB). We demonstrate that outstanding performance of RO in terms of speed (t p =37ps) and static power (7nA/stage) can be achieved at 4.3K with V DD reduced down to 0.325V. Index Terms-Cryogenic electronics, 28nm FD-SOI, ring oscillator, back-biasing, quantum computing, ultra-low-power.
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Dates et versions

hal-01887151 , version 1 (18-10-2018)

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H. Bohuslavskyi, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, et al.. Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization. IEEE Transactions on Electron Devices, 2018, 65 (9), pp.3682 - 3688. ⟨10.1109/TED.2018.2859636⟩. ⟨hal-01887151⟩
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