Ni 2 C surface carbide to catalyze low-temperature graphene growth - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2018

Ni 2 C surface carbide to catalyze low-temperature graphene growth

Résumé

The possibility to grow a graphene layer using the chemical-vapor-deposition technique over a Ni2C/Ni(111) substrate has been identified experimentally, with the advantage of having a lower processing temperature (T<500∘C), compared to standard growth over a Ni(111) surface. To understand the role of the metal carbide/metal catalyst, we first perform a static study of the Ni2C/Ni(111) structure and of the binding and removal of a carbon atom at the surface, using both a tight-binding (TB) energetic model and ab initio calculations. Grand-canonical Monte Carlo TB simulations then allow us (i) to determine the thermodynamic conditions to grow graphene and (ii) to separate key reaction steps in the growth mechanism explaining how the Ni2C/Ni(111) substrate catalyzes graphene formation at low temperature.

Domaines

Matériaux
Fichier principal
Vignette du fichier
PhysRevB.97.205431.pdf (2.62 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01878588 , version 1 (06-02-2019)

Identifiants

Citer

Rafael Martinez-Gordillo, Céline Varvenne, Hakim Amara, Christophe Bichara. Ni 2 C surface carbide to catalyze low-temperature graphene growth. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (20), pp.1-9. ⟨10.1103/PhysRevB.97.205431⟩. ⟨hal-01878588⟩
154 Consultations
162 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More