The static characteristics and short-circuit capabilities of SIT (Static Induction Transistor) depend strongly on its channel design. Analysis show that the doping concentration and the width of the channel are crucial parameters in determining the specific on-resistance, threshold voltage and saturation capabilities of the device. Classically SIT is designed with a uniformly doped channel. Improving the saturation capability of such a device comes along with increasing its on resistance. This drawback can be overcome by using non-uniformly doped channel. This paper shows that this technique achieves a 12.3% decrease in saturation current without changing its on-resistance compared to uniformly doped channel case. This result allows a significant increase of 31% in terms of short-circuit withstanding time of SIT.