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Article Dans Une Revue Materials Science Forum Année : 2015

Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET

Résumé

In many power electronic inverters, the gate drive failure may put the switch normally-on in short-circuit (SC) risk. The high power density generated thus leads rapidly to the transistor failure. This paper presents our study via electro-thermal simulation of a 1200 V JFET under short circuit. It provides deep insight of physical phenomena present in the JFET during the short-circuit and will allow further improvements and understanding of it.

Domaines

Electronique
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Dates et versions

hal-01857350 , version 1 (15-08-2018)

Identifiants

Citer

Shiqin Niu, Maxime Berthou, Dominique Tournier. Bulk Thickness and Short Circuit Capacity of a 1200V 4H-SiC VJFET. Materials Science Forum, 2015, 821-823, pp.797 - 800. ⟨10.4028/www.scientific.net/MSF.821-823.797⟩. ⟨hal-01857350⟩
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