Magnetoresistive Random Access Memory
Résumé
A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
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Proc IEEE MRAM paper Apalkov-Dieny-Slaughter - Final version.pdf (3.17 Mo)
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