Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric element - Archive ouverte HAL Accéder directement au contenu
Brevet Année : 2016

Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric element

Chao-Sung Lai
  • Fonction : Auteur
Abdelkarim Ouerghi
Kuan-I Ho
  • Fonction : Auteur
Fichier non déposé

Dates et versions

hal-01814906 , version 1 (13-06-2018)

Identifiants

  • HAL Id : hal-01814906 , version 1

Citer

Mohamed Boutchich, Chao-Sung Lai, Abdelkarim Ouerghi, Kuan-I Ho. Method for obtaining a graphene-based field effect transistor, in particular a memory field effect transistor, equipped with an embedded dielectric element. France, Patent n° : EP 16 305 161.8. 2016. ⟨hal-01814906⟩
33 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More