Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2003
Fichier non déposé

Dates et versions

hal-01806758 , version 1 (04-06-2018)

Identifiants

  • HAL Id : hal-01806758 , version 1

Citer

K. Castellani-Coulié, B. Sagnes, Frédéric Saigné, J.-M. Palau, M.-C. Calvet, et al.. Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation. 40th IEEE Nuclear Space and Radiation Effects Conference, 2003, Monterey, United States. ⟨hal-01806758⟩
41 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More