Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation - Archive ouverte HAL
Communication Dans Un Congrès Année : 2003

Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation

Domaines

Electronique

Dauverchain Eric  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01806758

Soumis le : lundi 4 juin 2018-10:01:32

Dernière modification le : vendredi 19 avril 2024-13:44:22

Fichier non déposé

Dates et versions

hal-01806758 , version 1 (04-06-2018)

Identifiants

  • HAL Id : hal-01806758 , version 1

Citer

K. Castellani-Coulié, B. Sagnes, Frédéric Saigné, J.-M. Palau, M.-C. Calvet, et al.. Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs studied by device simulation. 40th IEEE Nuclear Space and Radiation Effects Conference, 2003, Monterey, United States. ⟨hal-01806758⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS URCA IES UNIV-MONTPELLIER CRESTIC CEM2
45 Consultations
0 Téléchargements

Partager

More