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Article Dans Une Revue Solid-State Electronics Année : 2004

Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism

Résumé

In this work, we present an atomic-scale modeling of a single conduction channel double-gate MOSFET based on the self-consistent solving of the two-dimensional Poisson equation with the Schrodinger equation. This later, expressed in tight-binding, is solved using the Green's function formalism in the axial part of the device (i.e. the source-channel-drain region) modeled as a single atomic linear chain and sandwiched between two gate dielectrics treated as perfect insulating media. For device with channel length typically below 10 nm, our results show that source-to-drain tunneling effect and electron reflection in the channel severely impact the device characteristics. Nevertheless, essential field-effect transistor behaviors are preserved, which demonstrates that the operation of double-gate devices can be still considered even at this ultimate limit of a single conduction channel depicted at the atomic-scale. (C) 2003 Elsevier Ltd. All rights reserved.

Dates et versions

hal-01759467 , version 1 (05-04-2018)

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M Bescond, Jean-Luc Autran, Daniela Munteanu, M Lannoo. Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism. Solid-State Electronics, 2004, 48 (4), pp.567-574. ⟨10.1016/j.sse.2003.09.025⟩. ⟨hal-01759467⟩
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