In this work, we present an atomic-scale modeling of a single conduction channel double-gate MOSFET based on the self-consistent solving of the two-dimensional Poisson equation with the Schrodinger equation. This later, expressed in tight-binding, is solved using the Green's function formalism in the axial part of the device (i.e. the source-channel-drain region) modeled as a single atomic linear chain and sandwiched between two gate dielectrics treated as perfect insulating media. For device with channel length typically below 10 nm, our results show that source-to-drain tunneling effect and electron reflection in the channel severely impact the device characteristics. Nevertheless, essential field-effect transistor behaviors are preserved, which demonstrates that the operation of double-gate devices can be still considered even at this ultimate limit of a single conduction channel depicted at the atomic-scale. (C) 2003 Elsevier Ltd. All rights reserved.