3D quantum modeling and simulation of multiple-gate nanowire MOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2004

3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

Résumé

The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their ``equivalent gate number'' and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the Non-Equilibrium Green's Function formalism.
Fichier non déposé

Dates et versions

hal-01759466 , version 1 (05-04-2018)

Identifiants

Citer

M Bescond, K Nehari, Jean-Luc Autran, N Cavassilas, Daniela Munteanu, et al.. 3D quantum modeling and simulation of multiple-gate nanowire MOSFETs. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, Unknown, Unknown Region. pp.617-620, ⟨10.1109/IEDM.2004.1419237⟩. ⟨hal-01759466⟩
38 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More