3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
Résumé
The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their ``equivalent gate number'' and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the Non-Equilibrium Green's Function formalism.