Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up
Résumé
This work presents a Non-Volatile SRAM (NV-SRAM) cell, resilient to information loss. The cell features fast storage (20ns) for the operating voltage of 1.0V. The information is backed-up during POWER-DOWN/ RECOVERY cycle in two bipolar Oxide Resistive RAMs (OxRRAMs). The proposed NV-SRAM is designed with an 8T2R structure using 22nm FDSOI technology and resistive memory devices based on HfO 2. The stability and the reliability of the NV-SRAM cell is investigated by taking into account the variability of the transistors. It is shown that high R OFF /R ON is necessary to ensure reliable RECOVERY operation and high SRAM yield under cell area and power consumption constraints.
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Hrazii et al.. 2013. Solid-State Electronics. Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solutio.pdf (332.55 Ko)
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