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Article Dans Une Revue Solid-State Electronics Année : 2013

Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up

Amara Amara
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Résumé

This work presents a Non-Volatile SRAM (NV-SRAM) cell, resilient to information loss. The cell features fast storage (20ns) for the operating voltage of 1.0V. The information is backed-up during POWER-DOWN/ RECOVERY cycle in two bipolar Oxide Resistive RAMs (OxRRAMs). The proposed NV-SRAM is designed with an 8T2R structure using 22nm FDSOI technology and resistive memory devices based on HfO 2. The stability and the reliability of the NV-SRAM cell is investigated by taking into account the variability of the transistors. It is shown that high R OFF /R ON is necessary to ensure reliable RECOVERY operation and high SRAM yield under cell area and power consumption constraints.
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Dates et versions

hal-01744003 , version 1 (28-03-2018)

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H. Hraziia, Adam Makosiej, Giorgio Palma, Jean-Michel Portal, Marc Bocquet, et al.. Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up. Solid-State Electronics, 2013, 90, pp.99-106. ⟨10.1016/j.sse.2013.02.045⟩. ⟨hal-01744003⟩
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