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Article Dans Une Revue Journal of Low Power Electronics and Applications Année : 2014

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Weisheng Zhao
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Résumé

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low Power Electron. Appl. 2014, 4 2
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Dates et versions

hal-01737320 , version 1 (19-03-2018)

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Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, et al.. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). Journal of Low Power Electronics and Applications, 2014, 4 (1), pp.1-14. ⟨10.3390/jlpea4010001⟩. ⟨hal-01737320⟩
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