Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
Résumé
We report Raman spectra of a single layer of silicon nanoparticles, spatially ordered in SiO2 at a tunneling distance from a silicon substrate. This is achieved by exploiting effects which enhance the nanocrystal signal, while suppressing the substrate one. The method is applied to investigate the structure of ion-implantation-produced Si nanoparticles annealed under different conditions. The results, which are in good agreement with transmission electron microscopy data, are used to explain photoluminescence measurements.
Domaines
Physique [physics]| Origine | Fichiers éditeurs autorisés sur une archive ouverte |
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