Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics - Archive ouverte HAL Access content directly
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Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics

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hal-01718857 , version 1 (27-02-2018)

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Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics. EuroSimE 2018, Apr 2018, Toulouse, France. ⟨10.1109/EuroSimE.2018.8369924⟩. ⟨hal-01718857⟩
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