Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-01718857 , version 1 (27-02-2018)

Identifiants

Citer

Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics. EuroSimE 2018, Apr 2018, Toulouse, France. ⟨10.1109/EuroSimE.2018.8369924⟩. ⟨hal-01718857⟩
108 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More