Micro-PL and DOP characterization of Vertical Cavity Surface Emitting Lasers (VCSEL) for emission at 850 nm with Al oxide confinement layers - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Micro-PL and DOP characterization of Vertical Cavity Surface Emitting Lasers (VCSEL) for emission at 850 nm with Al oxide confinement layers

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hal-01711100 , version 1 (16-02-2018)

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  • HAL Id : hal-01711100 , version 1

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Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Micro-PL and DOP characterization of Vertical Cavity Surface Emitting Lasers (VCSEL) for emission at 850 nm with Al oxide confinement layers. 17th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII), Oct 2017, Valladolid, Spain. ⟨hal-01711100⟩
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