Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2017

Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers

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hal-01710316 , version 1 (15-02-2018)

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  • HAL Id : hal-01710316 , version 1

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Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Aug 2017, Waterloo, Canada. ⟨hal-01710316⟩
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