Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers - Archive ouverte HAL
Poster De Conférence Année : 2017

Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers

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Optique / photonique Science des matériaux [cond-mat.mtrl-sci] Physique [physics]

Christophe Levallois  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01710316

Soumis le : jeudi 15 février 2018-18:05:07

Dernière modification le : mardi 17 septembre 2024-10:16:17

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Dates et versions

hal-01710316 , version 1 (15-02-2018)

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  • HAL Id : hal-01710316 , version 1

Citer

Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Aug 2017, Waterloo, Canada. ⟨hal-01710316⟩

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