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Article Dans Une Revue Journal of Applied Physics Année : 2011

Influence of Pt as Mn diffusion barrier on the distribution of blocking temperature in Co/(Pt)/IrMn exchange biased layers

Vincent Baltz
B. Dieny

Résumé

Many spintronic devices such as thermally-assisted magnetic random access memories take advantage of the ferromagnetic(F)/antiferromagnetic(AF) interaction to pin the magnetization of a reference layer. However, they suffer from detrimental blocking temperatures distributions from memory cell to memory cell. A low-temperature contribution to the distribution was ascribed to spin-glass like regions which are randomly spread over the film. We report on an attempt to reduce the amount of these spin-glass like regions due to interdiffusion of species by adding a diffusion barrier at the F/AF interface.
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Dates et versions

hal-01683846 , version 1 (23-05-2019)

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Vincent Baltz, B. Dieny. Influence of Pt as Mn diffusion barrier on the distribution of blocking temperature in Co/(Pt)/IrMn exchange biased layers. Journal of Applied Physics, 2011, 109, pp.066102. ⟨10.1063/1.3558983⟩. ⟨hal-01683846⟩
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