Article Dans Une Revue IEEE Electron Device Letters Année : 2017

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

Nandha Kumar Subramani
Julien Couvidat
Michel Prigent
Raymond Quéré

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hal-01661735 , version 1 (12-12-2017)

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Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Jean-Christophe Nallatamby, Didier Floriot, et al.. Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties. IEEE Electron Device Letters, 2017, 38 (8), pp.1109 - 1112. ⟨10.1109/LED.2017.2717539⟩. ⟨hal-01661735⟩
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