Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

Y. Guhel; B. Boudart; N. Vellas; Christophe Gaquière

doi:10.1016/j.mee.2010.04.022

Journal Articles Microelectronic Engineering Year : 2010

Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

(1) , (1) , (2) , (2)

1
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Y. Guhel

Function : Author

Laboratoire Universitaire des Sciences Appliquées de Cherbourg

B. Boudart

Function : Author
PersonId : 16148
IdHAL : bertrand-boudart
IdRef : 060260092

Laboratoire Universitaire des Sciences Appliquées de Cherbourg

N. Vellas

Function : Author

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Christophe Gaquière

Function : Author
PersonId : 746853
IdHAL : christophe-gaquiere
ORCID : 0000-0003-3082-2489
IdRef : 059765615

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

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Engineering Sciences [physics] Electronics

Bertrand BOUDART : Connect in order to contact the contributor

https://hal.science/hal-01646869

Submitted on : Thursday, November 23, 2017-7:33:16 PM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-01646869 , version 1 (23-11-2017)

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HAL Id : hal-01646869 , version 1
DOI : 10.1016/j.mee.2010.04.022

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Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière. Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose. Microelectronic Engineering, 2010, 87 (11), pp.2443 - 2447. ⟨10.1016/j.mee.2010.04.022⟩. ⟨hal-01646869⟩

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Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose

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