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Article Dans Une Revue Journal of Electronic Materials Année : 2011

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Résumé

Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with different geometries, and their forward characteristics were measured up to 300°C. The 1.7-kV diodes exhibited unipolar conduction up to 6 V at 275°C, whereas 6-kV diodes showed ideal on-resistance, Ron. An optimized JBS design permits a higher breakdown voltage to be obtained than for the pure Schottky diode, with a reasonable increase (10%) of the on-resistance. Results demonstrate the feasibility of tungsten JBS diodes for fast-switching, high-voltage, and high-temperature applications.

Domaines

Electronique

Dates et versions

hal-01627572 , version 1 (02-11-2017)

Identifiants

Citer

Maxime Berthou, Philippe Godignon, Josep Montserrat, José Millán, Dominique Planson. Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier. Journal of Electronic Materials, 2011, 40 (12), pp.2355 - 2362. ⟨10.1007/s11664-011-1774-y⟩. ⟨hal-01627572⟩
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