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Article Dans Une Revue IEEE Photonics Technology Letters Année : 2017

Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias

Résumé

We report on a new cost effective, with a low temperature budget and simple bonding process on silicon, presenting efficient heat spreading and great potentialities in integration. This process is based on a thick electro-plated copper bonding layer through silicon vias and is expected to reduce significantly the bonded device internal temperature. We apply this process to realize 1.55-μm emitting vertical-cavity surface-emitting lasers. We demonstrate continuous wave operation from room temperature up to 55 °C, an internal temperature reduction of 13 °C, and we estimate a decrease of 30% of the overall device thermal impedance.
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hal-01582538 , version 1 (06-09-2017)

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Fethallah Taleb, Salvatore Pes, Cyril Paranthoen, Christophe Levallois, Nicolas Chevalier, et al.. Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias. IEEE Photonics Technology Letters, 2017, 29 (13), pp.1105 - 1108. ⟨10.1109/LPT.2017.2703599⟩. ⟨hal-01582538⟩
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