Enhancement of VCSEL Performances Using Localized Copper Bonding Through Silicon Vias
Résumé
We report on a new cost effective, with a low temperature budget and simple bonding process on silicon, presenting efficient heat spreading and great potentialities in integration. This process is based on a thick electro-plated copper bonding layer through silicon vias and is expected to reduce significantly the bonded device internal temperature. We apply this process to realize 1.55-μm emitting vertical-cavity surface-emitting lasers. We demonstrate continuous wave operation from room temperature up to 55 °C, an internal temperature reduction of 13 °C, and we estimate a decrease of 30% of the overall device thermal impedance.
Fichier principal
2017 IEEE PTL Taleb Enhancement of VCSEL performances using localized copper bonding through Si vias [PREPRINT].pdf (269.76 Ko)
Télécharger le fichier
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|
Loading...