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Article Dans Une Revue EPJ Photovoltaics Année : 2017

Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

Résumé

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
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hal-01495026 , version 1 (24-03-2017)

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Yong Huang, S. Aharon, Alain Rolland, Laurent Pedesseau, Olivier Durand, et al.. Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells. EPJ Photovoltaics, 2017, 8, pp.85501. ⟨10.1051/epjpv/2017001⟩. ⟨hal-01495026⟩
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