Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells

The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

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Physique [physics]

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pv160009.pdf (1.35 Mo)

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https://hal.science/hal-01495026

Soumis le : vendredi 24 mars 2017-14:22:38

Dernière modification le : lundi 16 septembre 2024-17:52:04

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hal-01495026 , version 1 (24-03-2017)

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HAL Id : hal-01495026 , version 1
DOI : 10.1051/epjpv/2017001

Citer

Yong Huang, S. Aharon, Alain Rolland, Laurent Pedesseau, Olivier Durand, et al.. Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells. EPJ Photovoltaics, 2017, 8, pp.85501. ⟨10.1051/epjpv/2017001⟩. ⟨hal-01495026⟩

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