Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells

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hal-01424644 , version 1 (02-01-2017)

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  • HAL Id : hal-01424644 , version 1

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Gwenaëlle Hamon, Jean Decobert, Nicolas Vaissiere Vaissière, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. Journées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France. ⟨hal-01424644⟩
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