Conference Papers
Year : 2016
Raphaël Lachaume : Connect in order to contact the contributor
https://hal.science/hal-01424644
Submitted on : Monday, January 2, 2017-4:01:49 PM
Last modification on : Monday, October 17, 2022-1:34:15 PM
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- HAL Id : hal-01424644 , version 1
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Gwenaëlle Hamon, Jean Decobert, Nicolas Vaissiere Vaissière, Raphaël Lachaume, Romain Cariou, et al.. Direct Growth of Crystalline Silicon on GaAs by Low Temperature PECVD: Towards Hybrid Tunnel Junctions for III-V/Si Tandem Cells. Journées Nationales du Photovoltaïque (JNPV), Nov 2016, Dourdan, France. ⟨hal-01424644⟩
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