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Article Dans Une Revue Materials Science Forum Année : 2014

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

Résumé

This work deals with the selective heteroepitaxial growth of silicon carbide on (100) diamond substrates using the Vapour-Liquid-Solid (VLS) transport. The morphology, the structure and doping were determined using various characterization techniques. In order to achieve succesful heteroepitaxy, the diamond surface was silicided by solid-state reaction between a silicon layer and the substrate at 1350 °C. This allowed forming a SiC buffer layer on which p-doped 3C-SiC(100) islands elongated in the <110> directions were obtained after VLS growth. The influence of the experimental parameters on the epitaxial growth is discussed.
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Dates et versions

hal-01391865 , version 1 (03-11-2016)

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Arthur Vo-Ha, Mickael Rebaud, Mihai Lazar, Alexandre Tallaire, Véronique Soulière, et al.. Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport. Materials Science Forum, 2014, 806, pp.33 - 37. ⟨10.4028/www.scientific.net/MSF.806.33⟩. ⟨hal-01391865⟩
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