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Article Dans Une Revue Materials Science Forum Année : 2015

Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors

Résumé

Few layers graphene has been grown on 4H-SiC. Since this material has outstanding electronic properties, we aimed fabricating graphene field-effect transistors on silicon carbide wafer. Growth of the graphene layers was made by e-beam sublimation of silicium under ultra high vacuum (UHV). These layers were patterned and used as channels of transistors with source and drain made of P+ SiC. The different technological steps were checked through Raman spectroscopy, Scanning Electron Microscopy (SEM), and electrical characterizations.
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hal-01391855 , version 1 (03-11-2016)

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Julien Pezard, Jérémy Lhuillier, Zakarya El-Friach, Véronique Soulière, Bertrand Vilquin, et al.. Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors. Materials Science Forum, 2015, 821-823, pp.941 - 944. ⟨10.4028/www.scientific.net/MSF.821-823.941⟩. ⟨hal-01391855⟩
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