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Article Dans Une Revue International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Année : 2015

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

Résumé

This paper focuses on the modeling of a power PiN diode. The focal point basis is the dependence on temperature. The PiN diode remains a difficult device to model mainly during switching transients. An advanced PiN diode temperature-dependent model is developed and implemented in VHDL-AMS. Heterogeneous simulation scheme including the circuit wiring parasitic components, the probe effects and the dependent diode models is successfully simulated using SIMPLORER simulator. Experimental data of several commercial PiN diodes are compared to simulation results at different temperature levels. A good rate of consistency is found.

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Dates et versions

hal-01388318 , version 1 (26-10-2016)

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Citer

Sameh Mtimet, Walid Ben Salah, Salah Tarek Ben, Ferid Kourda, Hervé Morel. An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩. ⟨hal-01388318⟩
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