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Communication Dans Un Congrès Année : 1997

A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits

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Electronique
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Dates et versions

hal-01279637 , version 1 (26-02-2016)

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  • HAL Id : hal-01279637 , version 1

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Raphaël Sommet, Yves Perreal, Raymond Quéré. A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits. GAAS, 1997, Bologne, Unknown Region. pp.149--152. ⟨hal-01279637⟩

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