Modeling Magnetic Near-Field Injection at Silicon Die Level
Résumé
Near-field injection at silicon die level is a promising application for various area such as the analyses of integrated circuit (IC) susceptibility to electromagnetic interferences and security for cryptographic applications. This paper presents a first attempt to simulate the voltage induced on integrated circuit interconnects by a magnetic field probe. The validation of the simulation results is based on near-field injection performed on a test chip containing various types of interconnects and on-chip voltage sensors.
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Boyer-Modeling Magnetic Near-Field Injection at Silicon Die Level_final_v2.pdf (1.37 Mo)
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