Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test
Résumé
3-D power module structures allow for better cooling and lower parasitic inductances compared with the classical planar technology. In this paper, we present a 3-D technology that uses an innovative assembly method (direct copper-to-copper bonding). The concept and manufacturing process of this technology is described in detail. An accurate electrical characterization is then performed to compare its performance with that of the classical planar structures.
Mots clés
bonding processes
interconnections
power semiconductor devices
semiconductor device manufacture
semiconductor device metallisation
semiconductor device packaging
semiconductor device testing
thermal management (packaging)
3D power module structures
3D technology
Cu-Cu
assembly method
direct copper-to-copper bonding
manufacturing process
parasitic inductances
planar technology
power interconnects
Assembly
Bonding
Copper
Heating
Packaging
Substrates
3-D packaging
power electronics
spark plasma sintering (SPS)
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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