Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs
Résumé
In this work, the static and low frequency noise
characterization of standard and rotated UTBOX n - type
transistors is reported. The main short channel effects and analog
parameters are studied in order to investigate the impact of the
channel orientation: <110> versus <100>. In addition to the
improvement on the electrical properties for the
rotated - channel devices, the 1/f noise level is found to be quite
similar for long - channel devices for both rotated and standard
channel transistors. Low frequency noise spectroscopy is also
used as a diagnostic tool in order to identify traps in the Si film.