Communication Dans Un Congrès Année : 2015

Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs

Résumé

In this work, the static and low frequency noise characterization of standard and rotated UTBOX n - type transistors is reported. The main short channel effects and analog parameters are studied in order to investigate the impact of the channel orientation: <110> versus <100>. In addition to the improvement on the electrical properties for the rotated - channel devices, the 1/f noise level is found to be quite similar for long - channel devices for both rotated and standard channel transistors. Low frequency noise spectroscopy is also used as a diagnostic tool in order to identify traps in the Si film.

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Dates et versions

hal-01196423 , version 1 (16-04-2025)

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Bogdan Cretu, E. Simoen, Jean-Marc Routoure, Régis Carin, M. Aoulaiche, et al.. Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs. EUROSOI-ULIS’2015 Conference, Jan 2015, Bologne, Italy. ⟨10.1109/ULIS.2015.7063817⟩. ⟨hal-01196423⟩
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