Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2015

Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

Abstract

High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.
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Dates and versions

hal-01132475 , version 1 (26-05-2021)

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Bastien Bonef, Lionel Gérard, Jean-Luc Rouvière, Adeline Grenier, Pierre-Henri Jouneau, et al.. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 2015, 106 (5), pp.051904. ⟨10.1063/1.4907648⟩. ⟨hal-01132475⟩
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