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Journal Articles Applied Physics Letters Year : 2014

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Abstract

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.
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Dates and versions

hal-01130613 , version 1 (03-06-2021)

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Iännis Roland, Y. Zeng, Z. Han, X. Checoury, C. Blin, et al.. Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon. Applied Physics Letters, 2014, 105, pp.011104. ⟨10.1063/1.4887065⟩. ⟨hal-01130613⟩
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